Sensitive volume thickness for silicon on insulator (SOI) devices has scaled to the point\nthat energy loss straggling cannot be ignored within the development of the manufacturing process.\nIn this study, irradiation experiments and Geant4 simulation were carried out to explore the influence\nof energy loss straggling on single event upsets (SEUs) caused by sub-8 MeV proton direct ionization.\nWe took a 28 nm fully-depleted SOI static random-access memory (SRAM) as the research target.\nAccording to our results, the depositing energy spectrum formed by monoenergetic low-energy\nprotons that penetrated through the sensitive volume of the target SRAM was extremely broadened.\nWe concluded that the SEUs we observed in this article were attributed to energy loss straggling.\nTherefore, it is sensible to take the new mechanism into consideration when predicting proton-induced\nSEUs for modern nanometer SOI circuits, instead of the traditional linear energy transfer (LET) method.
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